Part Number: IRF320
Function: 400V, N-Channel Power MOSFET
Pacakge : TO-220AA Type
Manufacturer: Harris Semiconductor
Pinouts:
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features
1. 2.8A and 3.3A, 350V and 400V
2. rDS(ON) = 1.8W and 2.5W
3. Single Pulse Avalanche Energy Rated
4. SOA is Power Dissipation Limited
5. Nanosecond Switching Speeds
6. Linear Transfer Characteristics
7. High Input Impedance
8. Majority Carrier Device
Other data sheets are available within the file: IRF321, IRF322, IRF323
IRF320 Datasheet PDF Download
