IRF320 Datasheet PDF – 400V, N-Ch, Power MOSFET – Harris

Part Number: IRF320

Function: 400V, N-Channel Power MOSFET

Pacakge : TO-220AA Type

Manufacturer: Harris Semiconductor

IRF320 datasheet


These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.


1. 2.8A and 3.3A, 350V and 400V
2. rDS(ON) = 1.8W and 2.5W
3. Single Pulse Avalanche Energy Rated
4. SOA is Power Dissipation Limited
5. Nanosecond Switching Speeds
6. Linear Transfer Characteristics
7. High Input Impedance
8. Majority Carrier Device

Other data sheets are available within the file: IRF321, IRF322, IRF323

IRF320 Datasheet PDF Download

IRF320 pdf