IRF640 Datasheet PDF – 200V, 9A, HEXFET MOSFET

What is IRF640?

This is a power MOSFET used for switching and amplification applications. It is an N-channel MOSFET with a voltage rating of 200V and a current rating of 9A. The IRF640 has a low on-resistance of 0.40 Ohm, which allows it to handle high power and reduce power loss.

Function: HEXFET Power MOSFET ( VDSS = 200V, ID = 9A )

Package: TO-220AB Type

Manufacturer: International Rectifier, a semiconductor company that specialized in power management technology, was acquired by Infineon Technologies AG in 2015.

Image and Pinouts:


IRF630 pinout datasheet


This is HEXFET Power MOSFET. VDSS = 200V, RDS(on) = 0.40 Ohm, ID = 9A.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The MOSFET is housed in a TO-220 package, which provides good thermal dissipation and makes it easy to mount on a heatsink. It is suitable for use in various electronic circuits, including power supplies, motor control circuits, and audio amplifiers.



1. Advanced Process Technology

2. Dynamic dv/dt Rating

3. Fast Switching

4. Fully Avalanche Rated


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 9 A

4. Drain Power Dissipation: Pd = 74 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C



IRF640 Datasheet PDF Download

IRF640 pdf