This is one of the types of MOSFETs and is a kind of transistor.
Part Number: IRF640N
Function: 200V, HEXFET Power MOSFET
Package: TO-220AB, D2Pak, TO-262 Pin Type
Manufacturer: International Rectifier, Infineon
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Description
Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF640N Pinout
Features
1. Advanced Process Technology
2. Dynamic dv/dt Rating
3. 175°C Operating Temperature
4. Fast Switching
5. Fully Avalanche Rated
6. Ease of Paralleling
7. Simple Drive Requirements
Summary
1. Planar cell structure for wide SOA
2. Optimized for broadest availability from distribution partners
3. Product qualification according to JEDEC standard
4. Silicon optimized for applications switching below <100kHz
5. Industry standard through-hole power package
6. High-current carrying capability package (up to 195 A, die-size dependent)
7. Capable of being wave-soldered
IRF640N Datasheet PDF Download
