Part Number: IRFP150N
Function: 100V, 42A, HEXFET Power MOSFET
Package: TO-247AC Type
Manufacturer: International Rectifier
Image and Pinouts:
Description
The IRFP150N is HEXFET Power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Features
1. Advanced Process Technology
2. Dynamic dv/dt Rating
3. 175°C Operating Temperature
4. Fast Switching
5. Fully Avalanche Rated
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 100 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 42 A
4. Drain Power Dissipation: Pd = 160 W
5. Channel temperature: Tch = 175 °C
6. Storage temperature: Tstg = -55 to +175 °C
Other data sheets are available within the file: IRFP150, IRFP150NPBF
IRFP150N Datasheet PDF Download
