Part Number: J512
Function: -250V, -5A, P-Channel MOSFET Transistor
Package: TO-220, SC-67 Pin Type
Manufacturer: Toshiba
Images:
Description
This is Silicon P Channel MOS Field Effect Transistor.
Features
1. Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.)
2. High forward transfer admittance : |Yfs| = 3.7 S (typ.)
3. Low leakage current : IDSS = −100 μA (max) (VDS = −250 V)
4. Enhancement−mode : Vth = −1.5~−3.5 V (VDS = −10 V, ID = −1 mA)
Pinout:
Absolute maximum ratings ( Ta=25°C)
1. Drain-source voltage : VDSS = -250 V
2. Drain-gate voltage (RGS = 20 kΩ): VDGR = -250 V
3. Gate-source voltage: VGSS = ±20 V
4. Drain current (DC) : ID = -5 A
5. Drain power dissipation (Tc = 25°C): PD = 30 W
6. Single pulse avalanche energy : EAS = 155 mJ
7. Avalanche current : IAR = -5 A
6. Repetitive avalenche energy : EAR = 3.0 mJ
7. Channel temperature: Tch = 150 °C
8. Storage temperature range : Tstg = -55~150 °C
Applications
1. Chopper Regulator
2. DC−DC Converter and Motor Drive
Other data sheets are available within the file: 2SJ512
J512 Datasheet PDF
