Part Number: K1117
Function: V dss = 600V, Id=6A, N-Channel MOSFET
Package: TO-220AB Type
Manufacturer: Toshiba
Image:
Description
This is 600V, 6A, N-Channel Field Effect Transistor.
Features
1. Drain Current : ID = 6.0A@ TC=25℃
2. Drain Source Voltage : VDSS = 600V(Min)
3. Static Drain-Source On-Resistance : Rds(on) = 0.95 Ω (max)
Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = 600 V
3. Drain peak current : ID(pulse) = 6 A
4. Drain current: IDR = 24 A
5. Drain Power dissipation : Pd = 100 W
6. Channel temperature: Tch = 100 °C
7. Storage temperature: Tstg = -55 ~ +150 °C
Applications:
1. Silicon N-Channel MOS Type
2. High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive.
Other data sheets are available within the file: 2SK1117
K1117 Datasheet PDF Download
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