Part Number: K1169
Function: Silicon N-Channel MOSFET
Package: TO-3P Type
Manufacturer: Hitachi ( Renesas Electronics )
Pinouts:
Description
1. Low on-resistance
2. High speed switching
3. Low drive current
4. No secondary breakdown
5. Suitable for switching regulator and DC-DC converter
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSS = 450 V
2. Gate to source voltage: VGSS = ±30 V
3. Drain current: ID = 20 A
4. Drain peak current : ID(pulse) = 80 A
5. Body to drain diode reverse drain current : IDR = 20 A
6. Channel dissipation: Pch = 120 W
Applications
1. High speed power switching
Other data sheets are available within the file: 2SK1169, 2SK1170, K1170
K1169 Datasheet PDF Download
