Part Number: K2221
Function: 8A, 200V, Silicon N Channel MOSFET
Package: TO-3P Type
Manufacturer: Hitachi ( Renesas Electronics )
Pinouts:
Description
1. High power gain
2. Excellent frequency response
3. High speed switching
4. Wide area of safe operation
5. Enhancement–mode
6. Good complementary characteristics
7. Equipped with gate protection diodes
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage : VDSX = 200 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 8 A
4. Body to drain diode reverse drain current : IDR = 8 A
5. Channel dissipation: Pch = 100 W
6. Channel temperature: Tch = 150 °C
7. Storage temperature : Tstg = -55 to +150 °C
Application
1. Low frequency power amplifier
2. Complementary pair with 2SJ351, 2SJ352
Other data sheets are available within the file: 2SK2220, 2SK2221, K2220
K2221 Datasheet PDF Download
