Part Number: K2608, 2SK2608
Function : 900V, 3A, Silicon N Channel MOSFET
Package: TO-220AB Type
Manufacturer: Toshiba
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Description
This is 900V, 3A, Silicon N Channel MOS Type Field Effect Transistor.
Features
1. Low drain−source ON resistance : RDS (ON)= 3.73 Ω(typ.)
2. High forward transfer admittance : |Yfs|=2.6 S (typ.)
3. Low leakage current : IDSS= 100 μA (max) (VDS= 720 V)
4. Enhancement mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)
Pinout
Absolute Maximum Ratings
1. Drain−source voltage : VDSS = 900 V
2. Drain−gate voltage (RGS= 20 kΩ): VDGR = 900 V
3. Gate−source voltage : VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C) : PD = 100 W
5. Single pulse avalanche energy : EAS = 295 mJ
6. Drain current : Id = 3 A
Applications:
1. Switching Regulator
K2608 Datasheet PDF
