K2718 Datasheet – 900V, N-Ch MOSFET – Toshiba

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K2718, 2SK2718

Description

Silicon N Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba

Image

K2718 mosfet

Description

This is 900V, 2.5A, N-Channel MOSFET.

Features

1. Low drain−source ON resistance  : RDS (ON)= 5.6 Ω(typ.)

2. High forward transfer admittance  : |Yfs| = 2.0 S (typ.)

3. Low leakage current  : IDSS= 100 µA (max) (VDS= 720 V)

4. Enhancement mode  : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

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Applications

1. DCDC Converter and Motor Drive

Pinout

K2718 datasheet pinout

Maximum Ratings

1. Drain source voltage: VDSS = 900 V
2. Drain gate voltage (RGS= 20 kΩ): VDGR = 900  V
3. Gate source voltage: VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C) : PD = 40 W
5. Single pulse avalanche energy : EAS = 216 mJ

K2718 Datasheet

 

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