This is one of the types of MOSFETs and is a kind of transistor.
Part Number: K2718, 2SK2718
Description
Silicon N Channel MOSFET
Package: TO-220 Type
Manufacturer: Toshiba
Image
Description
This is 900V, 2.5A, N-Channel MOSFET.
Features
1. Low drain−source ON resistance : RDS (ON)= 5.6 Ω(typ.)
2. High forward transfer admittance : |Yfs| = 2.0 S (typ.)
3. Low leakage current : IDSS= 100 µA (max) (VDS= 720 V)
4. Enhancement mode : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)
K2718Applications
1. DCDC Converter and Motor Drive
Pinout
Maximum Ratings
1. Drain source voltage: VDSS = 900 V
2. Drain gate voltage (RGS= 20 kΩ): VDGR = 900 V
3. Gate source voltage: VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C) : PD = 40 W
5. Single pulse avalanche energy : EAS = 216 mJ
