K2788 Datasheet PDF – 60V, 2A, N-Ch, MOSFET – Renesas

Part Number: K2788

Function: 60V, 2A, N-Channel MOSFET

Package: UPAK Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

K2788 datasheet



This is 60V, 2A, Silicon N-Channel MOSFET.

The K2788 is a N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Hitachi.
It is commonly used as a switch in power electronics applications, where its low on-resistance
and fast switching speed make it well-suited for high-efficiency power conversion systems.

The K2788 has a maximum drain-source voltage of 60V and a maximum drain current of 2A,
making it suitable for high voltage, high current applications.


1. Low on-resistance : RDS(on)= 0.12Ω typ (V GS= 10 V, ID= 1 A)
2. Low drive current
3. High speed switching
4. 4V gate drive devices.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ±20 V

3. Drain current: ID = 2 A

4. Drain peak current : ID(pulse) = 4 A

5. Body to drain diode reverse drain current : IDR = 2 A

6. Channel dissipation: Pch = 1 W


1. High Speed Power Switching

Other data sheets are available within the file: 2SK2788

K2788 Datasheet PDF Download

K2788 pdf

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