Part Number: K3152
Function: 10A, 120V, Silicon N Channel MOSFET
Package: TO–220FM Type
Manufacturer: Hitachi ( Renesas Electronics )
Pinouts:
Description
1. Low on-resistance RDS= 100 mΩtyp.
2. High speed switching
3. 4 V gate drive device can be driven from 5 V source
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 120 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 10 A
4. Drain peak current : ID(pulse) = 40 A
5. Body-drain diode reverse drain current : IDR = 10 A
6. Avalanche current : IAP = 10 A
7. Avalanche energy : EAR = 8.5 mJ
8. Channel dissipation: Pch = 25 W
Applications
1. High Speed Power Switching
Other data sheets are available within the file: 2SK3152
K3152 Datasheet PDF Download
