Part Number: K4013, 2SK4013
Function: 800V, 6A, N-Channel MOSFET, Transistor
Package: TO-220 Type
Manufacturer: Toshiba Semiconductor
Images:
Description
K4013 is 800V, 6A, Silicon N Channel MOS Type Field Effect Transistor.
Features
1. Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.)
2. High forward transfer admittance: |Yfs| = 5.0 S (typ.)
3. Low leakage current: IDSS = 100 μA (max) (VDS = 640 V)
4. Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 800 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 6 A
4. Drain Power Dissipation: Pd = 45 W (Tc = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Switching Regulator
K4013 PDF Datasheet
