K4A60DA Datasheet PDF – 500V, 13A, MOSFET, Transistor

Part Number: K4A60DA

Function: 500V, 13A, Silicon N Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba

Image and Pinouts:

K4A60DA datasheet

 

Description

This is 500V, 13A, Silicon N Channel MOS Type Field Effect Transistor

Features

1.  Low drain-source ON resistance: RDS (ON)= 1.7 Ω(typ.)

2.  High forward transfer admittance: ⎪Yfs⎪= 2.2 S (typ.)

3. Low leakage current: IDSS= 10 μA (max) (VDS= 600 V)

4. Enhancement-mode: Vth= 2.4 to 4.4 V (VDS= 10 V, ID= 1 mA)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 13 A

4. Drain Power Dissipation: Pd = 45 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Switching Regulator

Other data sheets are available within the file: TK4A60DA

 

K4A60DA Datasheet PDF Download


K4A60DA pdf