Part Number: K4A60DA
Function: 500V, 13A, Silicon N Channel MOSFET
Package: TO-220 Type
Manufacturer: Toshiba
Image and Pinouts:
Description
This is 500V, 13A, Silicon N Channel MOS Type Field Effect Transistor
Features
1. Low drain-source ON resistance: RDS (ON)= 1.7 Ω(typ.)
2. High forward transfer admittance: ⎪Yfs⎪= 2.2 S (typ.)
3. Low leakage current: IDSS= 10 μA (max) (VDS= 600 V)
4. Enhancement-mode: Vth= 2.4 to 4.4 V (VDS= 10 V, ID= 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 13 A
4. Drain Power Dissipation: Pd = 45 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Switching Regulator
Other data sheets are available within the file: TK4A60DA
K4A60DA Datasheet PDF Download
