What is K4A60DA?
It is manufactured by several companies, including Toshiba, and has a maximum voltage rating of 600 volts and a maximum current rating of 3.5 amperes.
The K4A60DA is commonly used in power supply circuits, audio amplifiers, and other applications that require switching or amplification of high voltages and currents.
The full part number is TK4A60DA.
The function of this semiconductor is 600V, N-Channel MOSFET.
The manufacturers of this product is Toshiba.
See the preview image and the PDF file for more information.
Preview images :
This is 600V, 3.5A, Silicon N-Channel MOSFET. The K4A60DA transistor is designed with a high voltage capability and a low on-resistance, which makes it suitable for use in high-power applications. Its fast switching speed and high reliability make it a popular choice for use in switching power supplies, audio amplifiers, and other electronic circuits that require high power handling capabilities.
Advantages Vs Disadvantages
1. High Voltage Rating: High maximum voltage rating of 600 volts, making it suitable for use in circuits that require high voltage handling.
2. Low On-Resistance: Low on-resistance, which means that it can handle high currents with minimal power loss.
3. Fast Switching Speed: Fast switching speed, which makes it suitable for use in circuits that require fast switching times.
4. High Reliability: It is designed with high reliability and is suitable for use in applications that require long-term performance.
1. Sensitive to Static Electricity: Sensitive to static electricity, and improper handling can damage the device.
2. Limited Current Rating: Maximum current rating of 3.5 amperes, which limits its use in high-current applications.
3. Higher Cost: Generally more expensive than other MOSFET transistors with similar specifications, which can make it less cost-effective for some applications.
1. Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)
3. Low leakage current: IDSS = 10 μA (VDS = 600 V)
4. Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-source voltage: VDSS = 600 V
2. Gate-source voltage: VGSS = ±30 V
3. Drain current : DC (Note 1) ID = 3.5A, Pulse (t = 1 ms) (Note 1) IDP = 14 A
4. Drain power dissipation (Tc = 25°C): PD = 35 W
5. Single pulse avalanche energy (Note 2) : EAS = 158 mJ
6. Avalanche current : IAR = 3.5 A
7. Repetitive avalanche energy (Note 3) : EAR = 3.5 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature range : Tstg = −55 to 150 °C
1. Switching Regulator