K8A55DA PDF Datasheet – 550V, 7.5A, N-ch, MOSFET

This post explains for the MOSFET.

The Part Number is K8A55DA, TK8A55DA.

The package is TO-220 Type.

The function of this transistor is 550V, 7.5A, N-Channel MOSFET.

Manufacturer: Toshiba

Preview images :

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K8A55DA transistor pinout

Description

K8A55DA is Silicon N Channel MOS Type Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor).

This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

Features

1. Low drain-source ON-resistance: RDS (ON) = 0.9 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 3.0 S (typ.)

3. Low leakage current: IDSS = 10 μA (max) (VDS = 550 V)

4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

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K8A55DA pdf datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 550 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 7.5 A

4. Drain Power Dissipation: Pd = 40 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Switching Regulator

K8A55DA PDF Datasheet

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