K8A60DA Datasheet – 600V, Nch MOSFET – Toshiba

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K8A60DA

Function: 600V, 7.5A, Silicon N Channel MOSFET Type

Package: TO-220 Type

Manufacturer: Toshiba

Image :
K8A60DA image

( Marking Number : TK8A60DA -> K8A60DA  )

Description

This is Silicon N Channel MOS Type Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor).  K8A60DA transistor is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

Features

1.  Low drain-source ON resistance: RDS (ON)= 0.8 Ω(typ.)

2.  High forward transfer admittance: ⎪Yfs⎪= 4.0 S (typ.)

3.  Low leakage current: IDSS= 10 μA (max) (VDS= 600 V)

4.  Enhancement-mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Pinout

K8A60DA datasheet pinout

Applications:

1. Switching Regulator

K8A60DA Datasheet PDF


 

Other data sheets are available within the file: TK8A60DA, TK8A600A

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