Part Number: ME12P04
Function: P-Channel 40V, 18.6A, MOSFET
Package: TO 252 Type
Manufacturer: Force mos Matsuki Electric ( http://www.force-mos.com/ )
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Description
The ME12P04 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Pinout:
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = – 40 V
2. Gate to source voltage: VGSS = ± 25 V
3. Drain current: ID = – 18.6 A (Tc = 25°C)
4. Maximum Power Dissipation: Pd = 25 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Power Management in Note book
2. Portable Equipment
3. Battery Powered System
4. DC/DC Converter
5. Load Switch
6. LCD Display inverter
ME12P04 Datasheet PDF Download
Other data sheets are available within the file: ME12P04-G