Part Number: SKW30N60HS
Marking : K30N60HS
Function: 600V, 30A, High Speed IGBT
Package: TO-247-3 Type
Manufacturer: Infineon Technologies
Pinouts:
Description
This is 600V, 30A, High Speed IGBT in NPT-technology.
The IGBT is insulated-gate bipolar transistor.
Image:
Features
• 30% lower Eoffcompared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
(1) Parallel switching capability
(2) Moderate Eoffincrease with temperature
(3) Very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 600 V
2. Gate to emitter voltage: Vges = ± 20 V
3. Collector current : Ic = 41 A
4. Collector dissipation : Ptot = 250 W
5. Junction temperature : Tj = 150 °C (Tc = 25°C)
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file: SKW30N60HS
K30N60HS Datasheet PDF Download
