Part Number: MRF175GV
Function: N-CHANNEL BROADBAND RF POWER MOSFET
Package: CASE 375–04, STYLE 2 Type
Manufacturer: MACOM
Image and Pinouts:
Description
The RF MOSFET Line 200/150W, 500MHz, 28V.
Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of these devices makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
Features
1. N-Channel Enhancement Mode MOSFET
2. Low Crss : 20 pF typ @ VDS = 28 V
3. Low Thermal Resistance
4. 100% Ruggedness Test at Rate Output Power
Application Circuits :
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 65 V
2. Gate to source voltage: VGSS = ± 40 V
3. Drain current: ID = 26 A
4. Total Device Dissipation: Pd = 400 W (Tc = 25°C)
5. Operating Junction temperature : Tch = 150 °C
6. Storage temperature: Tstg = -65 to +150 °C
Applications:
1. Aerospace and Defense
2. ISM
Official Homepage: https://www.macom.com/products/product-detail/MRF175GV
Other data sheets are available within the file: MRF175LU, MRF175LV, MRF175GU, MRF175GV
MRF175GV Datasheet PDF Download
