RJP30E2 Datasheet PDF – RJP30E2DPK-M0, 360V, 35A, IGBT

This is one of the semiconductor types.

Part Number: RJP30E2, RJP30E2DPK-M0

This product has Silicon N-Channel 360V, 35A, IGBT High Speed Power Switching functions.

Package: TO-220FL Type

The manufacturer of the product is Renesas Electronics.

See the preview image and the PDF file for more information.

Image and Pinouts:


This is 360V, 35A, IGBT. The IGBT is insulated-gate bipolar transistor.


1. Trench gate technology (G5H series)
2. Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ
3. High speed switching  tf = 150 ns typ
4. Low leak current  ICES= 1 μA max

RJP30E2 Datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 360 V

2. Gate to emitter voltage: Vges = ± 30 V

3. Collector current : Ic = 35 A

4. Collector dissipation : Pc = 50 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

RJP30E2 Datasheet PDF

RJP30E2DPK-M0 pdf

Other data sheets are available within the file: RJP30E2DPK-M0, RJP30E2DPK-M0-T0