This is one of the semiconductor types.
Part Number: RJP30E2, RJP30E2DPK-M0
This product has Silicon N-Channel 360V, 35A, IGBT High Speed Power Switching functions.
Package: TO-220FL Type
The manufacturer of the product is Renesas Electronics.
See the preview image and the PDF file for more information.
Image and Pinouts:
Description
This is 360V, 35A, IGBT. The IGBT is insulated-gate bipolar transistor.
Features
1. Trench gate technology (G5H series)
2. Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ
3. High speed switching tf = 150 ns typ
4. Low leak current ICES= 1 μA max
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 360 V
2. Gate to emitter voltage: Vges = ± 30 V
3. Collector current : Ic = 35 A
4. Collector dissipation : Pc = 50 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
RJP30E2 Datasheet PDF
Other data sheets are available within the file: RJP30E2DPK-M0, RJP30E2DPK-M0-T0
