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TD310IN Datasheet PDF – Triple IGBT/MOS Driver

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Part Number: TD310IN

Function: TRIPLE IGBT/MOS DRIVER WITH CURRENT SENSE

Package: DIP 16 Pin

Manufacturer: STMicroelectronics

Image and Pinouts:
TD310IN datasheet

Description

The TD310IN is designed to drive one, two or three Power IGBT/MOS and has driving capability for pulse transformer. So it is perfectly suited to interface control IC with Power Switches in low
side or half-bridge configuration.

Features

1. THREE POWER IGBT/MOS AND PULSE TRANSFORMER DRIVERS
2. CURRENT SENSE COMPARATOR
3. UNCOMMITTED OP-AMP
4. 0.6 A PER CHANNEL PEAK OUTPUT CURRENT CAPABILITY
5. LOW OUTPUT IMPEDANCE TYP: 7Ω AT 200mA
6. CMOS/LSTTL COMPATIBLE INVERTING INPUT WITH HYSTERESIS
7. 4V TO 16V SINGLE SUPPLY OPERATION
8. LOW BIAS CURRENT TYP: 1.5mA
10. ADJUSTABLE UNDERVOLTAGE LOCKOUT LEVEL
11. STAND-BY MODE
12. CHANNEL PARALLELING CAPABILITY

Other data sheets are available within the file: TD310I, TD310ID, TD3101N

TD310IN Datasheet PDF Download


TD310IN pdf

 

2SH20 Datasheet PDF – 600V, 36A, N-Ch, IGBT – Hitachi

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Part Number: 2SH20

Function: 36A, 600V, Silicon N-Channel IGBT

Package: TO-3P Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

2SH20 datasheet

 

Description

The 2SH20 is 600V, 36A, N-Channel IGBT.

An N-Channel IGBT, or Insulated Gate Bipolar Transistor, is a type of power transistor that combines the high-speed switching capabilities of a MOSFET with the low on-state resistance of a bipolar transistor. It is commonly used in high-power applications such as motor control, power supplies, and lighting.

The N-Channel IGBT is capable of switching large amounts of current with high speed and efficiency, making it ideal for applications that require high power output.

Features

1. High speed switching
2. Low on saturation voltage

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage : VCES = 600 V
2. Gate to emitter voltage : VGES = ±20 V
3. Collector current : IC = 36 A
4. Collector peak current : ic(peak) = 60 A
5. Collector dissipation : PC = 100 W
6. Channel temperature : Tj = 150 °C
7. Storage temperature: Tstg = – 55 to +150 °C

components

Applications

1. High speed power switching

Other data sheets are available within the file: SH20

2SH20 Datasheet PDF Download


2SH20 pdf