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G4PC40W Datasheet – IRG4PC40W, 600V, 40A, IGBT ( PDF )

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This is one of the transistor types. The IGBT is insulated-gate bipolar transistor.

Part Number: G4PC40W

Function: 600V, 40A, INSULATED GATE BIPOLAR TRANSISTOR

Package: TO-247AC Type

Manufacturer: International Rectifier, ( https://www.infineon.com/ )

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G4PC40W IGBT IRG4PC40W

Description

This is 600V, 40A, IGBT ( INSULATED GATE BIPOLAR TRANSISTOR ).

Benefits :

1. Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (“hard switched” mode)

2. Of particular benefit to single-ended converters and boost PFC topologies 150W and higher

3. Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz)

G4PC40W Pinout

G4PC40W datasheet

 

Features

1. Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications

2. Industry-benchmark switching losses improve efficiency of all power supply topologies

3. 50% reduction of Eoff parameter

4. Low IGBT conduction losses

5. Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability

Other data sheets are available within the file: IRG4PC40W

G4PC40W Datasheet PDF Download

G4PC40W pdf

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VOW3120 PDF – Widebody 2.5 A IGBT and MOSFET Driver

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Part Number: VOW3120

Function: Widebody 2.5 A IGBT and MOSFET Driver / Icc= 2.5 mA maximum supply current

Package: DIP, SO 8 Pin Type

Manufacturer: Vishay Semiconductors

Pinouts:

VOW3120 datasheet

 

Description

The VOW3120 consists of an infrared light emitting diode optically coupled to an integrated circuit with a power output stage.

This optocoupler is ideally suited for driving power IGBTs and MOSFETs used in motor control and inverter applications. The high operating voltage range of the output stage provides the drive voltages required by gate controlled devices.

The voltage and current supplied by this optocoupler makes it ideallysuited for directly driving
IGBTs with ratings up to 1200 V/100 A. For IGBTs with higher ratings, the VOW3120 can be used to drive a discrete power stage which drives the IGBT gate.

Image:

components

Features

1. 2.5 A minimum peak output current

2. 10 mm minimum external creepage distance

3. 50 kV/μs (typ.) common mode rejection

4. ICC = 2.5 mA maximum supply current

5. Under voltage lock-out (UVLO) with hysteresis

6. Wide operating VCC range: 15 V to 32 V

7. Industrial temperature range: -40 °C to +100 °C

 

Applications:

1. Industrial welding equipment

2. Motor drives

3. Industrial inverters

4. Commercial and residential solar inverters

5. Wind generator inverters

 

VOW3120 Datasheet PDF Download


VOW3120 pdf

Other data sheets are available within the file: V0W3120, VOW3120-X017T