igbt

30F122 Datasheet – GT30F122 – 300V, 120A IGBT – Toshiba

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Part Number: 30F122, GT30F122

Function: IGBT / Insulated Gate Bipolar Transistor Silicon N-Channel

Package: TO-220SIS Type

Manufacturer: Toshiba

Image :
30F122 image

Description

30F122 Datasheet

GT30F122 Pinout

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

(1) IGBTs also featuring fast switching

(2) Low collector-emitter saturation voltage even in the large current area

(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications

(4) High input impedance allows voltage drives

(5) Available in a variety of packages

30F122 Datasheet
30F122 pdf

Other data sheets are available within the file: GT30F122

G4PC50U Datasheet – Vces=600V, UltraFast Speed IGBT – IR

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Part Number: G4PC50U, IRG4PC50U

Function : UltraFast Speed IGBT

Package: TO-247AC Type

Manufacturer: International Rectifier

Image

g4pc50u-igbt

 

Description

1. UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

2. Generation4 IGBT design provides tighter parameter distribution and higher efficiency than Generation3

 

 

Pinout

g4pc50u-datasheet-pinout

 

 

Benefits

1. Generation 4 IGBT’s offer highest efficiencies available

2. IGBT’s optimized for specific application conditions

3. HEXFRED diodes optimized for performance with IGBT’s . Minimized recovery characteristics require less/no snubbing

4. Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBT’s

 

G4PC50U Datasheet


 

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