Part Number: RJP30H1, RJP30H1DPD-00-J2

Function: 360V, 30A, N-Channel Power MOSFET

Package: TO-263 Type

Manufacturer: Renesas Electronics

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Description

This is 360V, 30A, Silicon N Channel IGBT.

 

Features

1. Trench gate and thin wafer technology (G6H-II series)

2. High speed switching: tr = 80 ns typ., tf = 150 ns typ.

3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

4. Low leak current: ICES= 1 µA max.

 

Pinouts:

 

Absolute Maximum Ratings

1. Collector to emitter voltage : VCES = 360 V

2. Gate to emitter voltage : VGES = ±30 V

3. Collector current : IC = 30 A

4. Collector dissipation : Pc = 40 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

RJP30H1 Datasheet

 

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