Part Number: RJH60F7ADPK
Function: 600V, 90A, Silicon N Channel IGBT
Package: TO-3P Type
Manufacturer: Renesas Technology
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Description
RJH60F7ADPK is 600V, 90A, Silicon N Channel IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.
Features
• High speed switching
• Low on-state voltage
• Fast recovery diode
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 600 V
2. Gate to emitter voltage: Vges = ± 30 V
3. Collector current : Ic = 90 A
4. Collector dissipation : Pc = 328.9 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. High Speed Power Switching
RJH60F7ADPK PDF Datasheet
