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IKP40N65F5 Datasheet PDF – 650V, 40A, IGBT, Transistor

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Part Number: IKP40N65F5, Marking : K40EF5

Function: 650V, 40A, DuoPack IGBT and Diode

Package: TO-247, TO-220 Type

Manufacturer: Infineon Technologies

Image and Pinouts:

IKP40N65F5 datasheet

 

Description

This is 650V, 40A, High Speed IGBT.

This is a High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1
fast and soft anti parallel diode.

 

Features

1. High speed F5 technology offering

2. Best-in-Class efficiency in hard switching and resonant topologies

3. 650V breakdown voltage

4. Low Qg

5. IGBT copacked with RAPID 1 fast and soft antiparallel diode

6. Maximum junction temperature175°C

7. Qualified according to JEDEC for target applications

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 650 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 74 A

4. Power dissipation : Pc = 255 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Solar converters

2. Uninterruptible power supplies

3. Welding converters

4. Mid to high range switching frequency converters

 

Other data sheets are available within the file: IKP40N65F5XKSA1, IKW40N65F5, K40F655

 

IKP40N65F5 Datasheet PDF Download


IKP40N65F5 pdf

RJP30K3DPP-M0 Datasheet PDF – 360V, 40A, N-Ch, IGBT

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Part Number: RJP30K3DPP-M0

Function: 360V, 40A, N-Channel IGBT

Package: TO-220FL Type

Manufacturer: Renesas Electronics

Image and Pinouts:

RJP30K3DPP-M0 datasheet

 

Description

This is 360V, 40A, Silicon N Channel IGBT.

Features

1. Trench gate and thin wafer technology (G6H-II series)

2. Low collector to emitter saturation voltage VCE(sat)= 1.1V typ

3. High speed switching tr = 90 ns typ, tf = 250 ns typ

4. Low leak current ICES= 1 uA max

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 360 V

2. Gate to emitter voltage: Vges = ± 30 V

3. Collector current : Ic = 40 A

4. Collector dissipation : Pc = 30 W

5. Junction temperature : Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. High Speed Power Switching

Datasheet PDF Download


RJP30K3DPP-M0 pdf

Other data sheets are available within the file: RJP30, RJP30K3DPP, RJP30K

 

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