igbt

K50T60T Datasheet PDF – 600V, 80A, IGBT, Transistor

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Part Number: K50T60T

Function: 600V, 80A, IGBT, Low Loss DuoPack

Package: TO-247 Type

Manufacturer: Infineon Technologies

Image and Pinouts:

K50T60T datasheet

Description

This is 600V, 80A, IGBT. The IGBT is insulated-gate bipolar transistor.

Features

1. Very low VCE(sat) 1.5V (typ.)

2. Maximum Junction Temperature 175°C

3. Short circuit withstand time 5us

4 Designed for :
– Frequency Converters
– Uninterrupted Power Supply

5 TRENCHSTOP and Fieldstop technology for 600V applications offers :
– very tight parameter distribution
– high ruggedness, temperature stable behavior
– very high switching speed

6. Positive temperature coefficient in VCE(sat)

7. Low EMI

8. Low Gate Charge

9. Very soft, fast recovery anti-parallel Emitter Controlled HE diode

10. Qualified according to JEDEC1 for target applications

11. Pb-free lead plating; RoHS compliant

 

Absolute Maximum Ratings (Ta = 25°C)

components

Other data sheets are available within the file:

IKW50N60T, K50T60

 

K50T60T Datasheet PDF Download


K50T60T pdf

RJP63F3 Datasheet PDF – 630V, 40A, N-Ch, IGBT, Transistor

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Part Number: RJP63F3, RJP63F3DPP-M0

Function: 630V, 40A, N-Channel IGBT

Package: TO-220FL Type

Manufacturer: Renesas Electronics

Image

RJP63F3 igbt renesas

 

Description

This is 630V, 40A, Silicon N Channel IGBT.

 

Features

1. Trench gate and thin wafer technology (G6H series)

2. Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ

3. High speed switching tf = 100 ns typ

4. Low leak current  ICES= 1 μA max

5. Isolated package TO-220FL

 

RJP63F3 datasheet pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage : VCES = 630 V

2. Gate to emitter voltage : VGES = ± 30 V

3. Collector current : IC = 40 A

4. Collector peak current : ic(peak) – 200 A

5. Collector dissipation : PC  = 30 W

Applications:

High Speed Power Switching

 

RJP63F3 Datasheet


 

RJP63F3DPP-M0 pdf

 

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