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Part Number: IRG4PC50S

Function: 600V, 70A, Standatd Speed IGBT

Package: TO-247AC Type

Image and Pinouts:

IRG4PC50S datasheet

Description

This is 600V, 70A, insulated-gate bipolar transistor.

Benefits :

1. Generation 4 IGBTs offer highest efficiency available

2. IGBTs optimized for specified application conditions

3. Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBTs

1. Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)

2. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 70 A

4. Maximum power dissipation : Pd = 200 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file:

IRG4PC50, IRG4PC50SPBF

Features

1. Lower Eoff compared to previous generation

2. Short circuit withstand time – 10us

3. Designed for :
(1) Motor controls
(2) Inverter
(3) SMPS

4 NPT-Technology offers:
(1) very tight parameter distribution
(2) high ruggedness, temperature stable behaviour
(3) parallel switching capability

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 1200 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 8 A

4. Power dissipation : Ptot = 125 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: SKW07N120