RJP63K2 Datasheet PDF – 630V, 35A, N-Ch, IGBT – Renesas

Posted on May 3, 2022November 8, 2022 by pinout

Part Number: RJP63K2

Function: 630V, 35A, N-Channel IGBT

Package: TO-220FL Type

Manufacturer: Renesas Electronics

Image

RJP63K2 IGBT Transistor

Description

This is 630V, 35A, Silicon N Channel IGBT.

Features

1. Trench gate and thin wafer technology (G6H-II series)

2. Low collector to emitter saturation voltage: VCE(sat)= 1.9 V typ

3. High speed switching: tr= 60 ns typ, tf= 200 ns typ.

4. Low leak current: ICES= 1 uA max

5. Isolated package TO-220FL

Pinouts:

RJP63K2 datasheet

Absolute Maximum Ratings :

1. Collector to emitter voltage : VCES = 630 V

2. Gate to emitter voltage : VGES = ±30 V

3. Collector current : IC = 35 A

4. Collector peak current : ic(peak) = 200 A

5. Collector dissipation : PC = 25 W

Applications:

1. High Speed Power Switching

RJP63K2 Datasheet PDF

Other data sheets are available within the file: RJP63K2DPP-M0

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FGPF4633 Datasheet PDF – 330V, PDP Trench IGBT

Posted on May 1, 2022October 17, 2022 by pinout

Part Number: FGPF4633

Function: 330 V PDP Trench IGBT

Package: TO 220 Type

Features

• High Current Capability
• Low Saturation Voltage: V CE(sat) = 1.55 V @ IC= 70 A
• High Input Impedance
• Fast Switching
• RoHS Compliant

Image and pinouts :

Description

This is 330V, IGBT.

Using novel trench IGBT technology, Fairchild’s new series of trench IGBTs offer the optimum performance for consumer appliances, PDP TV and lighting applications where low conduction and switching losses are essential.

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 330 V

2. Gate to emitter voltage: Vges = ± 30 V

3. Collector current : Ic = 300 A (Tc = 25°C)

4. Maximum Dissipation: Pd = 30.5 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

FGPF4633 datasheet

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