igbt archives - Page 94 of 265

Features

1. High Speed Switching

2. Low Saturation Voltage : Typical V CE(sat) = 2.9V at Ic = 30A

3. RoHS-compliant, halogen-free TO-3P package

4. Internal “Co-Pak” Fast Recovery Diode

Pinouts:

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 1200 V

2. Gate to emitter voltage: Vges = ± 30 V

3. Continuous Collector Current: Ic = 30 A (Tc = 100°C)

4. Maximum Power dissipation : Pd = 208 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Part Number: G15N60

Function: 600V, 15A, Fast IGBT

Package: TO-220, TO-247 Type

Manufacturer: Infineon

Images:

G15N60 datasheet pinout

Description

This is 600V, 15A, Fast IGBT in NPT-technology.

1. 75% lower Eoff compared to previous generation combined with low conduction losses

2. Short circuit withstand time – 10 µs

3. Designed for : Motor controls , Inverter

4. NPT-Technology for 600V applications offers :

(1) Very tight parameter distribution
(2) High ruggedness, temperature stable behaviour
(3) parallel switching capability

5. Qualified according to JEDEC1 for target applications

6. Pb-free lead plating; RoHS compliant

[…]

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 31 A

4. Power Dissipation : Pc = 139 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: SGP15N60, SGW15N60