JCS4N60F PDF Datasheet – 600V, 4.0A / MOSFET

This post explains for the MOSFET.

The Part Number is JCS4N60F.

The function of this semiconductor is 600V, 4A, N-CHANNEL MOSFET.

The package is TO-220C Type

Manufacturer: Gesar, JILIN SINO-MICROELECTRONICS

Preview images :

JCS4N60F pinout datasheeet

Description

This is 600V, 4A, N-Channel MOSFET.

Features

1. Low gate charge
2. Low Crss (typical 9pF )
3. Fast switching
4. 100% avalanche tested
5. Improved dv/dt capability
6. RoHS product

JCS4N60F transistor mosfet

Applications:

1. High efficiency switch mode power supplies

2. Electronic lamp ballasts based on half bridge

3. UPS

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JCS4N60F Datasheet

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STK630FC PDF Datasheet – 200V, Power MOSFET – AUK

Part Number: STK630FC, STK630

Function: 200V, 9A, Power MOSFET

Package: TO-220F-3SL Type

Manufacturer: AUK

Images:STK630FC pdf pinout

Description

STK630FC is 200V, Power MOSFET. A Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of transistor used in power electronic applications for switching and amplification. It’s a three-terminal device that consists of a gate, a source, and a drain. Power MOSFETs are commonly used for high-power switching in various electronic systems, including voltage regulators, motor drives, power inverters, and more.

1. Voltage Handling: Power MOSFETs are designed to handle higher voltages compared to their smaller-signal counterparts. They can be found with voltage ratings ranging from a few volts to several hundred volts, such as the “200V” you mentioned earlier.

2. Low On-Resistance (Rds(on)): One of the most important characteristics of Power MOSFETs is their low on-resistance when they are in the fully conducting state. This low resistance allows them to efficiently handle high currents without significant power loss.

3. Switching Speed: Power MOSFETs are available in various switching speeds, ranging from standard-speed devices to high-speed devices optimized for applications requiring rapid switching.

Features

• Avalanche rugged technology.

• Low input capacitance.

• Low leakage current : 10 ㎂ (Max.) @ VDS=200V.

• Low RDS(on) : 0.30Ω(Typ.)

STK630FC datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 9 A

4. Drain Power Dissipation: Pd = 30 W

5. Avalanche energy: Ear = 7.2 mJ

6. Channel temperature: Tch = 150 °C

7. Storage temperature: Tstg = -55 to +150 °C

 

STK630FC PDF Datasheet