MOSFET

B20N03 MOSFET – N-Ch, 30V, 12A, Transistor ( Datasheet )

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: B20N03, EMB20N03V

Function: 30V, 12A, N-Channel, MOSFET (Transistor)

Package: EDFN 3 x 3, 8 Pin Type

Manufacturer: Excelliance MOS

Images:

B20N03 mosfet datasheet

Description

B20N03 is N‐Channel Logic Level Enhancement Mode Field Effect Transistor.

Pinouts:

B20N03 pinout pdf

Absolute maximum ratings ( Tc=25°C )

1. Gate‐Source Voltage : VGS = ±20 V

2. Continuous Drain Current : Id = 12 A

3. Pulsed Drain Current : IDM = 48 A

4. Avalanche Current : IAS = 8 A

5. Avalanche Energy (L = 0.1mH, ID=8A, RG=25Ω ) : EAS = 3.2 mJ

6. Repetitive Avalanche Energy ( L = 0.05mH ) : EAR = 1.6 mJ

 

B20N03 Datasheet

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K3878 PDF Datasheet – 900V, 9A, MOSFET – 2SK3878

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Part Number: K3878

Function: 900V, 9A, Field Effect Transistor

Package: TO-3PN Type

Manufacturer: Toshiba

Images:K3878 pdf pinout

Description

K3878 is 900V, 9A, Silicon N-Channel MOSFET (2SK3878). 

 

Features

1. Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)

2. High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)

3. Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)

4. Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm

K3878 datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 900 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 9 A

4. Total Power Dissipation: Pd = 150 W

5. Avalanche energy: Ear = 15 mJ

6. Channel temperature: Tch = 150 °C

7. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator

K3878 PDF Datasheet