What is IRF510, N-Channel MOSFET?

This is an N-channel MOSFET with a voltage rating of 100V and a current rating of 5.6A. It is commonly used in electronic devices such as power supplies, audio amplifiers, and motor control circuits.

Function: 5.6A, 100V, N-channel power MOSFET

Package: TO-220AB Type

Manufacturer: Harris Semiconductor

Image and Pinouts:

Description

The IRF510 power MOSFET is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Third Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

Features

1. Advanced Process Technology

2. Ultra Low On-Resistance

3. Dynamic dv/dt Rating

4. 175°C Operating Temperature

5. Fast Switching

6. Fully Avalanche Rated

Advantages Vs Disadvantages

Advantages:

1. It has a low on-resistance, which means it can handle high power and reduce power loss.

2. Its TO-220 package provides good thermal dissipation and makes it easy to mount on a heatsink.

Disadvantages:

It has a relatively low current rating compared to other power MOSFETs, which may not make it suitable for high-power applications.

2. Its gate capacitance is relatively high, which may limit its use in high-frequency switching applications.

Absolute Maximum Ratings

1. Drain to source Voltage: VDSS = 100 V

2. Gate to source Voltage: VGSS = ± 20 V

3. Drain current: ID = 5.6 A

4. Power Dissipation: Pd = 43 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

IRF510 Datasheet PDF Download