MOSFET

K3569 Datasheet PDF – N-Ch, 600V, 10A, MOSFET, 2SK3569

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What is K3569?

This is one of the types of MOSFETs and is a kind of transistor.

This is a MOSFET transistor designed for high-voltage, high-current switching applications. It has a maximum drain-source voltage rating of 600V and a maximum continuous drain current rating of 10A. The transistor is housed in a TO-220 package, making it suitable for use in a variety of power electronic circuits.

Part Number: K3569

Function: 600V, 10A, N-Channel MOSFET

Packagek : TO-220 Type

Manufacturer: Toshiba

See the preview image and the PDF file for more information.

Image

K3569 transistor

Description

K3569 transistor is 600V, 10A, Silicon N Channel MOS Type Field Effect Transistor.

It is high voltage and current ratings, which make it suitable for use in high-power applications such as motor control, power supplies, and lighting systems. It also has a low on-state resistance, which results in low power dissipation and improved efficiency.

This is relatively high gate charge, which may limit its switching speed in some applications. Additionally, like all MOSFETs, the K3569 is sensitive to electrostatic discharge (ESD) and may require additional protection circuitry to prevent damage during handling.

Features

1.  Low drain-source ON resistance: RDS (ON)= 0.54Ω(typ.)

2.  High forward transfer admittance: |Yfs| = 8.5S (typ.)

3.  Low leakage current: IDSS= 100 μA (VDS= 600 V)

4.  Enhancement-mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

 

K3569 pinout

K3569 datasheet pdf

 

Absolute Maximum Ratings (Ta =25°C)

1. Drain-source voltage : VDSS = 600 V

2. Drain-gate voltage (RGS =20 kΩ): VDGR = 600 V

3. Gate-source voltage : VGSS = ±30 V

4. Drain current DC : ID = 10 A

5. Drain power dissipation (Tc =25°C) : PD = 45 W

6. Single pulse avalanche energy : EAS = 363 mJ

7. Avalanche current : IAR = 10 A

8. Channel temperature: Tch = 150 °C

9. Storage temperature range : Tstg = -55~150 °C

 

Applications:

1. Switching Regulator

K3569 Datasheet PDF Download


K3569 pdf

Other data sheets are available within the file: 2SK3569

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K1304 Datasheet – 100V, 40A, N-Ch, MOSFET, Transistor

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This is a part number for a N-channel MOSFET transistor. MOSFETs are a type of field-effect transistor that are commonly used in electronic circuits for power amplification and switching applications.

Part Number: 2SK1304

Function: 100V, 40A, N-Channel MOSFET, Transistor

Package: TO-3P Type

Manufacturer: Hitachi (Renesas Electronics)

Image and Pinouts:

K1304 datasheet

 

Description

The K1304 MOSFET has a maximum drain-source voltage rating of 100 volts and a maximum continuous drain current rating of 40 amperes. It also has a low on-state resistance and fast switching speed, making it suitable for high-power applications.

Features

1. Low on-resistance

2. High speed switching

3. Low drive current

4. 4 V gate drive device – Can be driven from 5 V source

5. Suitable for motor drive, DC-DC converter, power switch and solenoid drive

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 40 A

4. Channel dissipation: Pch = 100 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Application:

1. High speed power switching

Other data sheets are available within the file: 2SK1304

K1304 Datasheet PDF Download


K1304 pdf