This is one of the types of MOSFETs and is a kind of transistor.
Part Number: IRFP260N
Function : Vdss=200V, Id=50A, HEXFET Power MOSFET
Package: TO-247AC type
Manufacturer: International Rectifier, Infineon Technologies
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Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
IRFP260N Pinout
Features
1. Advanced Process Technology
2. Dynamic dv/dt Rating
3. 175°C Operating Temperature
4. Fast Switching
5. Fully Avalanche Rated
6. Ease of Paralleling
7. Simple Drive Requirements
Absolute Maximum Ratings (TC = 25°C)
| Parameter | Symbol | Value | Unit |
| Drain–Source Voltage | VDSS | 200 | V |
| Gate–Source Voltage | VGSS | ±20 | V |
| Continuous Drain Current (TC=25°C) | ID | 50 | A |
| Pulsed Drain Current | IDM | 200 | A |
| Power Dissipation | PD | 300 | W |
| Junction Temperature | Tj | 150 | °C |
| Storage Temperature | Tstg | −55 ~ +150 | °C |
IRFP260N Datasheet
