TTK2837 PDF Datasheet – 500V, 20A, N-Ch, MOSFET

Part Number: TTK2837

Function: 500V, 20A, N-Channel MOSFET

Package: TO-3P Type

Manufacturer: Toshiba

Images:

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TTK2837 pdf datasheet

Description

The TTK2837 is 500V, 20A, Silicon N Channel MOS Type Field Effect Transistor.

This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1. Low drain-source on-resistance: RDS(ON) = 0.22 Ω (typ.)

2. High forward transfer admittance: |Yfs| = 8.5 S (typ.)

3. Low leakage current: IDSS = 10 µA (VDS = 500 V)

4. Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)

 

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mosfet TTK2837

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 20 A

4. Drain Power Dissipation: Pd = 280 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

3. Switching Regulator

TTK2837 PDF Datasheet

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P62NS04Z PDF Datasheet – N-Ch, 62A, Power MOSFET

This post explains for the MOSFET.

The Part Number is P62NS04Z, STP62NS04Z.

The function of this semiconductor is N-Channel 62A, Power MOSFET.

The package is TO-220 Type.

Manufacturer: STMicroelectronics

Preview images :

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P62NS04Z transistor pinout

Description

This fully clamped P62NS04Z MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended.

Features

1. 100% avalanche tested

2. Low capacitance and gate charge

3. 175 °C maximum junction temperature

P62NS04Z pdf datasheet

Application:

1. Switching applications

P62NS04Z PDF Datasheet

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