FI4019HG Datasheet PDF – 150V, 8.7A, Digital Audio MOSFET – IR

Part Number: FI4019HG

Function: 150V, 8.7A, Digital Audio MOSFET

Package: TO-220 Pin type

Manufacturer: International Rectifier, ( https://www.infineon.com/ )

Image :

FI4019HG Image

Description

This Digital Audio MOSFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge onfiguration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.

Features

1. Integrated Half-Bridge Package

2. Reduces the Part Count by Half

3. Facilitates Better PCB Layout

4. Key Parameters Optimized for Class-D

5. Audio Amplifier Applications

6. Low RDS(ON)for Improved Efficiency

7. Low Qg and Qsw for Better THD and Improved Efficiency

8. Low Qrr for Better THD and Lower EMI

9. Can Delivery up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier

10. Lead-Free Package

11. Halogen-Free

Pinout:

FI4019HG Datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 150 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 8.7 A (Tc = 25°C)

4. Drain Power Dissipation: Pd = 18 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

FI4019HG Datasheet PDF


FI4019HG pdf

Other data sheets are available within the file: FI4019HG-117P, IRFI4019HG-117P

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2N7002DW Datasheet PDF – 60V, Dual, N-Ch, FET, Transistor

Part Number: 2N7002DW

Function: 60V, N-channel enchancement mode field effect transistor

Package: SOT-363 Type

Manufacturer: Diodes Incorporated.

Image and Pinouts:

2N7002DW datasheet

 

Description

This is Dual N-Channel MOSFET.

This MOSFET has been designed to minimize the on-state resistance (Rds(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Totally Lead-Free & Fully RoHS Compliant
• Halogen and Antimony Free. “Green” Device
• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data :

• Case: SOT-363
• Case Material: Molded Plastic. “Green” Molding Compound.
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
• Weight: 0.006 grams (approximate)

 

2N7002DW Datasheet PDF Download


2N7002DW pdf