This is one of the types of MOSFETs and is a kind of transistor.

Part Number: 23N50E

Function: 500V, 23A, N-Ch, POWER MOSFET

Package: TO-3P(Q) Type

Manufacturer: Fuji Electric Device Technology

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Description

This is 500V, 23A, N-CHANNEL SILICON POWER MOSFET.

Features

1. Maintains both low power loss and low noise

2. Lower RDS(on) characteristic

3. More controllable switching dv/dt by gate resistance

4. Smaller VGSringing waveform during switching

5. Narrow band of the gate threshold voltage (3.0±0.5V)

6. High avalanche durability

Applications:

1. Switching regulators

2. UPS (Uninterruptible Power Supply)

3. DC-DC converters

Pinout:

Other data sheets are available within the file: FMH23N50E

23N50E Datasheet PDF Download

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Part Number: ME12P04

Function: P-Channel 40V, 18.6A, MOSFET

Package: TO 252 Type

Manufacturer: Force mos Matsuki Electric ( http://www.force-mos.com/ )

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Description

The ME12P04 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Pinout:

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 40 V

2. Gate to source voltage: VGSS = ± 25 V

3. Drain current: ID = – 18.6 A (Tc = 25°C)

4. Maximum Power Dissipation: Pd = 25 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Power Management in Note book

2. Portable Equipment

3. Battery Powered System

4. DC/DC Converter

5. Load Switch

6.  LCD Display inverter

ME12P04 Datasheet PDF Download

Other data sheets are available within the file: ME12P04-G