Part Number: CSD19536
Function: 100V, N-Channel NexFET Power MOSFET
Package: TO-220 Plastic Type
Manufacturer: Texas Instruments
Image and Pinouts:
Description
The 100 V, 2.3 mΩ, TO-220 NexFET power MOSFET is designed to minimize losses in power
conversion applications.
Features
1. Ultra-Low Qg and Q gd
2. Low Thermal Resistance
3. Avalanche Rated
(1) Pb-Free Terminal Plating
(2) RoHS Compliant
4. Halogen Free
5. TO-220 Plastic Package
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 100 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 150 A
4. Power Dissipation: Pd = 375 W
5. Channel temperature: Tch = 175 °C
6. Storage temperature: Tstg = -55 to +175 °C
Applications:
1. Secondary Side Synchronous Rectifier
2. Motor Control
Other data sheets are available within the file: CSD19536KCS
CSD19536 Datasheet PDF Download
