MOSFET

IRF540N Datasheet PDF – 100V, 33A, MOSFET, Transistor

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Part Number: IRF540N

Function: 33A, 100V, HEXFET N-Channel, Power MOSFET

Package: TO-220AB Type

Manufacturer: International Rectifier, Fairchild Semiconductor

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IRF540N MOSFET

Description

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Pinouts:

IRF540N datasheet

Description

1. Ultra Low On-Resistance
– rDS(ON)= 0.040Ω, VGS = 10V

2. Simulation Models
– Temperature Compensated PSPICE™ and SABER© Electrical Models
– Spice and SABER© Thermal Impedance Models

3. Peak Current vs Pulse Width Curve

4. UIS Rating Curve

 

IRF540N Datasheet PDF Download

IRF540N pdf


Other data sheets are available within the file: IRF540

K1808 Datasheet PDF – 900V, 4A, N-Ch, MOSFET – Renesas

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Part Number: K1808

Function: Silicon N-Channel MOSFET

Package: TO-220FM Type

Manufacturer: Renesas Electronics

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K1808 Transistor 2SK1808

Description

This is 900V, 4A, Silicon N-Channel MOSFET.

Features

1. Low on-resistance
2. High speed switching
3. Low drive current
4. No secondary breakdown
5. Suitable for switchingregulator, DC-DC converter

Pinouts:

K1808 datasheet

Absolute Maximum Ratings (Ta = 25°C)

Drain to source voltage: VDSS = 900 V
Gate to source voltage: VGSS = ± 30 V
Drain current: ID = 4 A
Drain peak current : ID(pulse) = 10 A
Body to drain diode reverse drain current : IDR = 4 A
Channel dissipation: Pch = 35 W
Channel temperature: Tch = 150 °C
Storage temperature: Tstg = +150 °C

Application

High Speed Power Switching.

 

Other data sheets are available within the file: 2SK1808

K1808 Datasheet PDF Download


K1808 pdf