MOSFET

06N02C PDF Datasheet – 20V, 50A, N-Ch, Power MOSFET

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Part Number: 06N02C, FNK06N02C

Function: 20V, 50A, N-Channel Power MOSFET

Package: TO-251 Type

Manufacturer: FNK Semiconductor

Images:06N02C datasheet

Description

The 06N02C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

1. Id = 50 A

2. Rds(on) < 7.5mΩ @ Vgs=4.5V, Rds(on) < 10.0mΩ @ Vgs=2.5V

3. High Power and current handing capability

4. Lead free product is acquired

 

06N02C datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 20 V

2. Gate to source voltage: VGSS = ± 12 V

3. Drain current: ID = 20 A

4. Maximum Power Dissipation: Pd = 50 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Application:

1. Battery Switch

2. Load switch

3. Power management

 

06N02C PDF Datasheet

K3797 Datasheet – N-ch, Vdss=600V, 13A, MOSFET, 2SK3797

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Part Number: K3797, 2SK3797

Function: N-Channel MOSFET ( Vdss = 600V, Vdgr = 600V )

Package: TO-220 type

Manufacturer: Toshiba Semiconductor

Image
K3797 mosfet

Description

This is 600V, 30A, Silicon N-Channel MOS Type Field Effect Transistor.

Features

1. Low drain-source ON resistance: RDS (ON)= 0.32Ω(typ.)

2. High forward transfer admittance: |Yfs| = 7.5 S (typ.)

3. Low leakage current: IDSS= 100 μA (VDS= 600 V)

4. Enhancement model: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

Pinout

K3797 datasheet pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 13 A

4. Drain Power Dissipation: Pd = 50 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator

K3797 Datasheet PDF


 

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