MOSFET

K2930 Datasheet PDF – 60V, 35A, N-Ch, MOSFET

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Part Number: K2930

Function: 35A, 60V, N Channel MOSFET

Package: TO-220AB Type

Manufacturer: Hitachi ( Renesas Electronics )

Image and Pinouts:

K2930 datasheet

 

Description

This is Silicon N Channel MOSFET.

Features

1. Low on-resistance : RDS=0.020 Ωtyp.
2. High speed switching
3. 4V gate drive device can be driven from 5V source

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ±20 V
3. Drain current: ID = 35 A
4. Drain peak current : ID(pulse) = 140 A
5. Body-drain diode reverse drain current : IDR = 35 A
6. Avalanche current : IAP = 35 A
7. Avalanche energy : EAR = 105 mJ
8. Channel dissipation: Pch = 50 W

Application

1. High Speed Power Switching

Other data sheets are available within the file: 2SK2930

 

K2930 Datasheet PDF Download


K2930 pdf

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2SK2800 MOSFET – 60V, 40A, Transistor ( Datasheet PDF )

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Part Number: 2SK2800

Function: 60V, N-Channel MOSFET

Package: TO-220AB Type

Manufacturer: Renesas Electronics

Image and Pinouts:

2SK2800 datasheet

 

Description

This is 60V, 40A, Silicon N-Channel MOSFET.

 

Features

1. Low on-resistance : RDS(on)= 15 mΩ typ.

2. High speed switching

3. Low drive current

4. 4V gate drive device can be driven from 5V source

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 40 A

4. Channel dissipation: Pch = 50 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. High Speed Power Switching

 

2SK2800 Datasheet PDF Download


2SK2800 pdf

Other data sheets are available within the file: K2800