MOSFET

K2134 Transistor – MOSFET, 200V, 13A, TO-220, 2SK2134 ( PDF )

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Part Number: K2134

Function: 200V, 13A, N-channel MOSFET

Package: TO-220AB

Manufacturer: NEC (Renesas Technology)

Image:
K2134 datasheet

Description

The K2134, 2SK2134-Z are N-channel Power MOS Field Effect Transistor designed for hig voltage switching applicaions.

components

Features

1. Low On-state resistance

2. Low Ciss = 500 pF Typ.

3. High Avalanche Capability Ratings

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 13 A

4. Total Power Dissipation: Pd = 1.5 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: 2SK2134, 2SK2134Z, K2134Z

K2134 Datasheet PDF Download


K2134 pdf

IRF320 Datasheet PDF – 400V, 3A, N-Ch, Power MOSFET

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3Part Number: IRF320

Function: N-Channel MOSFET

Package: TO-3 Pin Type

Manufacturer: Samsung

Image and Pinouts:
IRF320 datasheet

Description

This is 400V, N-Channel Power MOSFET.

Features

1. Low Rds(on)
2. Improved Inductiove reuggedness
3. Fast switching times
4. Rugged polusilicon gate cell structure
5. Low Input capacitance
6. Extended safe operating area
7. Improved high temperature reliability

components

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 400 V
2. Drain to gate voltage : VDGS = 400 V
3. Drain current: ID = 3.0 V

Other data sheets are available within the file: IRF321, IRF322, IRF323

IRF320 Datasheet PDF Download

IRF320 pdf

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