Part Number: 2SK1272

Function: 60V, 1A, MOS Field Effect Transistor

Package: TO-92 Type

Manufacturer: NEC (Renesas Technology)

Image and Pinouts:

 

Description

The 2SK1272, N-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5V power source. The MOSFET has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuits.

Features

1. Directly driven by ICs having a 5V power source.

2. Not necessary to consider driving current because of its high input impedance

3. Possible to reduce the number of parts by omitting the bias resistor.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20

3. Drain current: ID = 1 A

4. Total Power Dissipation : Pt = 750 mW

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

2SK1272 Datasheet PDF Download

Other data sheets are available within the file: K1272

This is a kind of MOSFET.

Part Number: K3567, 2SK3567

Function: 600V, 3.5A, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba

Image:

 

Description

This is Silicon N Channel MOS Type Field Effect Transistor.

Features ;

1. Low drain-source ON resistance: RDS (ON)= 1.7 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 2.5 S (typ.)

3. Low leakage current: IDSS= 100 μA (max) (VDS= 600 V)

4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = 600 V
2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 600 V
3. Gate-source voltage: VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C): PD = 35 W
5. Single pulse avalanche energy : EAS = 201 mJ
6. Avalanche current : IAR = 3.5 A
7. Repetitive avalanche energy : EAR = 3.5 mJ
8. Channel temperature: Tch = 150 °C
9. Storage temperature range : Tstg = -55~150 °C

Applications

1. Switching Regulator

Other data sheets are available within the file: 2SK3567

K3567 Datasheet PDF Download