Part Number: CS20N50ANH

Function: 500V, 20A, N-Channel MOSFET

Package: TO-3P Type

Manufacturer: Huajing Discrete Devices

Images:

Description

CS20N50ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-3PN, which accords with the RoHS standard.

Features

1. Fast Switching

2. Low ON Resistance(Rdson≤0.3Ω)

3. Low Gate Charge (Typical Data:63nC)

4. Low Reverse transfer capacitances(Typical:25pF)

5. 100% Single Pulse avalanche energy Test

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 20 A

4. Power Dissipation: Pd = 230 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Power switch circuit of electron ballast and adaptor

 

 

CS20N50ANH PDF Datasheet