MOSFET

7D0N65F1 PDF – KHB7D0N65F1 – 650V, 7A, MOSFET

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Part Number: 7D0N65F1, KHB7D0N65F1, KHB7D0N65P1

Function: 650V, 7A, N-Channel MOSFET

Package: TO-220AB Type

Manufacturer: KEC

Images:7D0N65F1 pdf mosfet

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.

Features

1. VDSS=650V, ID=7A

2. Drain-Source ON Resistance: RDS(ON)=1.4 @VGS=10V

3. Qg(typ.)= 32nC

7D0N65F1 datasheet pinout

7D0N65F1 PDF Datasheet

P55NE06 PDF Datasheet – 60V, MOSFET – STP55NE06

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This post explains for the power MOSFET.

The Part Number is P55NE06, STP55NE06.

The function of this semiconductor is 60V, 55A, N-channel enhancement mode MOSFET.

The package is TO-220, TO-220FP Type

Manufacturer: STMicroelectronics

Preview images :P55NE06 pdf pinout

Description

This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remark-able manufacturing reproducibility.

Features

1. TYPICAL RDS(on) = 0.019 Ω

2. EXCEPTIONAL dv/dt CAPABILITY

3. 100% AVALANCHE TESTED

5. HIGH dv/dt CAPABILITY

6. APPLICATION ORIENTED CHARACTERIZATION

P55NE06 datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 55 A

4. Allowable Power Dissipation: Pd = 130 W (Tc = 25°C)

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -65 to +175 °C

Applications:

1. DC MOTOR CONTROL

2. DC-DC & DC-AC CONVERTERS

3. SYNCHRONOUS RECTIFICATION

 

 

P55NE06 PDF Datasheet