Part Number: RJP30Y2A, RJP30Y2ADPE
Function: 360V, 35A, IGBT ( Silicon N Channel MOSFET )
Package: TO-220 Type
Manufacturer: HITACHI, Renesas
Image:
Description
This is IGBT for Plastic TV (360V, 35A).
Semiconductor Informations
Part Number: RJP30Y2A, RJP30Y2ADPE
Function: 360V, 35A, IGBT ( Silicon N Channel MOSFET )
Package: TO-220 Type
Manufacturer: HITACHI, Renesas
Image:
This is IGBT for Plastic TV (360V, 35A).
Part Number: ZVP2106A
Function: P-channel enhancement mode vertical DMOS FET
Package: TO-92 Package
Manufacturer: Diodes Incorporated.
Image and Pinouts:

This is – 60V, – 280mA, P-Channel MOSFET.
1. 60 Volt V DS
2. RDS(on) = 5Ω
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = – 60 V
2. Drain current: ID = – 280 mA
3. Gate to source voltage: VGSS = ± 20 V
4. Power Dissipation : Ptot = 700 mW
5. Operating temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file:
ZVP0120A, ZVP0535A, ZVP0540A, ZVP0545A, ZVP0545G