PSMN1R0-30YLD Datasheet PDF – 30V, MOSFET

Part Number: PSMN1R0-30YLD

Function: N-channel, 30V, 1.0 mΩ, Logic level MOSFET

Package: LFPAK56 Type

Manufacturer: NXP Semiconductors.

Image and Pinouts:

PSMN1R0-30YLD datasheet

 

Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.

NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.

NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Features

1. Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies

2. Superfast switching with soft-recovery; s-factor > 1

3. Low spiking and ringing for low EMI designs

 

Applications:

1. On-board DC-to-DC solutions for server and telecommunications

2. Secondary-side synchronous rectification in telecommunication applications

3. Voltage regulator modules (VRM)

 

PSMN1R0-30YLD Datasheet PDF Download


PSMN1R0-30YLD pdf

Other data sheets are available within the file: PSMN1R0, PSMN1R0-30

P75NF758 Datasheet – 75V, 80A, N-Ch MOSFET – ST

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: P75NF758, P75NF75B, Correct PN : STP75NF75

Function: N-channel Power MOSFET ( 75V, 80A )

Package: TO-220 Type

Manufacturer: STMicroelectronics

Image

P75NF758 mosfet

Description

This is N-channel, 75V, 0.0095Ω, 80A, STripFET II Power MOSFET.

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

Image and Pinout:

P75NF758 datasheet pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 75 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 80 A
4. Channel temperature: Tch = 150 °C
5. Storage temperature: Tstg = -55 to +175 °C

 

Applications

1. Switching application

P75NF758 Datasheet


 

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