2SK3570 MOSFET – 20V, 48A, Transistor ( Datasheet PDF )

Part Number: 2SK3570

Function: N-Channel Power MOSFET

Package: TO-220AB Type

Manufacturer: Renesas Electronics

Image and Pinouts:

2SK3570 datasheet

Description

The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

Features

1. 4.5V drive available.

2. Low on-state resistance, RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 24 A)

3. Low gate charge : QG = 23 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A)

4. Built-in gate protection diode

5. Surface mount device available

components

components

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 20 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 48 A

4. Total Power Dissipation: Pd = 1.5 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

2SK3570 Datasheet PDF Download


2SK3570 pdf

Other data sheets are available within the file: 2SK3570S, 2SK3570Z, 2SK3570ZK, K3570

BSO300N03S Datasheet – 30V, 7.2A, MOSFET ( PDF )

Part Number: BSO300N03S, BS0300N03S, Marking : 300N3S

Ordering Code : Q67042-S4205

Function: 30V, 7.2A, OptiMOS 2 Power-Transistor

Package: P-DSO-8 Type

Manufacturer: Infineon Technologies

Image and Pinouts:

BSO300N03S datasheet

 

Description

This is 30V, 7.2A, OptiMOS 2 Power-Transistor.

Features

1. Fast switching MOSFET for SMPS
2. Optimized technology for notebook DC/DC
3. N-channel
4. Logic level
5. Excellent gate charge x R DS(on) product (FOM)
6. Very low on-resistance R DS(on)
7. Avalanche rated
8. dv /dt rated
9. Pb-free lead plating; RoHS compliant

Other data sheets are available within the file: Q67042-S4205, 300-N3S, BSO300-N03S, BS0300N03S

 

BSO300N03S Datasheet PDF Download


BSO300N03S pdf

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